Wolfspeed Silicon Carbide Power MOSFETs
Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.
• Enhancement-mode N-channel SiC technology
• High Drain-Source breakdown voltages - up to 1200V
• Multiple devices are easy to parallel and simple to drive
• High speed switching with low on-resistance
• Latch-up resistant operation
• High Drain-Source breakdown voltages - up to 1200V
• Multiple devices are easy to parallel and simple to drive
• High speed switching with low on-resistance
• Latch-up resistant operation
SiC N-Channel MOSFET, 35 A, 900 V, 7-Pin D2PAK C3M0065090J
Manufacturer:
Wolfspeed
Manufacturer Part No:
C3M0065090J
Enrgtech Part No:
ET11108645
Warranty:
Manufacturer
£ 12.09
Checking for live stock
Channel Type:
N
Maximum Continuous Drain Current:
35 A
Maximum Drain Source Voltage:
900 V
Package Type:
D2PAK (TO-263)
Mounting Type:
Surface Mount
Pin Count:
7
Maximum Drain Source Resistance:
78 mΩ
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
2.1V
Minimum Gate Threshold Voltage:
1.8V
Maximum Power Dissipation:
113 W
Transistor Configuration:
Single
