N-Channel MOSFET, 157 A, 80 V, 5-Pin DFN NTMFS6H801NT1G

Channel Type:

N

Maximum Continuous Drain Current:

157 A

Maximum Drain Source Voltage:

80 V

Package Type:

DFN

Mounting Type:

Surface Mount

Pin Count:

5

Maximum Drain Source Resistance:

4.4 mΩ

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

4V

Minimum Gate Threshold Voltage:

2V

Maximum Power Dissipation:

166 W

Transistor Configuration:

Single

Maximum Gate Source Voltage:

±20 V

Number of Elements per Chip:

1

Width:

5.1mm

Typical Gate Charge @ Vgs:

64 nC @ 10 V

Length:

6.1mm

Maximum Operating Temperature:

+175 °C

Forward Diode Voltage:

1.2V

Height:

1.1mm

Minimum Operating Temperature:

-55 °C