N-Channel MOSFET, 17 A, 800 V, 3-Pin D2PAK STB18NM80

Channel Type:

N

Maximum Continuous Drain Current:

17 A

Maximum Drain Source Voltage:

800 V

Series:

MDmesh

Package Type:

D2PAK (TO-263)

Mounting Type:

Surface Mount

Pin Count:

3

Maximum Drain Source Resistance:

295 mΩ

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

5V

Minimum Gate Threshold Voltage:

3V

Maximum Power Dissipation:

190 W

Transistor Configuration:

Single

Maximum Gate Source Voltage:

-30 V, +30 V

Length:

10.75mm

Typical Gate Charge @ Vgs:

70 nC @ 10 V

Number of Elements per Chip:

1

Width:

10.4mm

Transistor Material:

Si

Maximum Operating Temperature:

+150 °C

Height:

4.6mm