N-Channel MOSFET, 10 A, 800 V, 3-Pin TO-220 IXFP10N80P

Channel Type:

N

Maximum Continuous Drain Current:

10 A

Maximum Drain Source Voltage:

800 V

Series:

HiperFET, Polar

Package Type:

TO-220

Mounting Type:

Through Hole

Pin Count:

3

Maximum Drain Source Resistance:

1.1 Ω

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

5.5V

Maximum Power Dissipation:

300 W

Transistor Configuration:

Single

Maximum Gate Source Voltage:

-30 V, +30 V

Typical Gate Charge @ Vgs:

40 nC @ 10 V

Maximum Operating Temperature:

+150 °C

Length:

10.66mm

Number of Elements per Chip:

1

Width:

4.83mm

Transistor Material:

Si

Minimum Operating Temperature:

-55 °C

Height:

9.15mm