Enhancement Mode Dual MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
Dual N-Channel MOSFET, 280 mA, 60 V, 6-Pin SOT-563 2N7002V
£ 0.11
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Channel Type:
N
Maximum Continuous Drain Current:
280 mA
Maximum Drain Source Voltage:
60 V
Package Type:
SOT-563
Mounting Type:
Surface Mount
Pin Count:
6
Maximum Drain Source Resistance:
13.5 Ω
Channel Mode:
Enhancement
Minimum Gate Threshold Voltage:
1V
Maximum Power Dissipation:
250 mW
Transistor Configuration:
Isolated
Maximum Gate Source Voltage:
-20 V, +20 V
