N-Channel MOSFET, 1.5 A, 30 V, 3-Pin SOT-323 Si1308EDL-T1-GE3

Channel Type:

N

Maximum Continuous Drain Current:

1.5 A

Maximum Drain Source Voltage:

30 V

Package Type:

SOT-323

Mounting Type:

Surface Mount

Pin Count:

3

Maximum Drain Source Resistance:

185 mΩ

Channel Mode:

Enhancement

Minimum Gate Threshold Voltage:

0.6V

Maximum Power Dissipation:

400 mW

Transistor Configuration:

Single

Maximum Gate Source Voltage:

-12 V, +12 V

Width:

1.35mm

Number of Elements per Chip:

1

Length:

2.2mm

Maximum Operating Temperature:

+150 °C

Typical Gate Charge @ Vgs:

1.4 nC @ 4.5 V

Transistor Material:

Si

Minimum Operating Temperature:

-55 °C

Height:

1mm