Dual N-Channel MOSFET, 6.5 A, 60 V, 8-Pin SOIC SI4946BEY-T1-GE3

Channel Type:

N

Maximum Continuous Drain Current:

6.5 A

Maximum Drain Source Voltage:

60 V

Package Type:

SOIC

Mounting Type:

Surface Mount

Pin Count:

8

Maximum Drain Source Resistance:

52 mΩ

Channel Mode:

Enhancement

Minimum Gate Threshold Voltage:

1V

Maximum Power Dissipation:

3.7 W

Transistor Configuration:

Isolated

Maximum Gate Source Voltage:

-20 V, +20 V

Width:

4mm

Number of Elements per Chip:

2

Transistor Material:

Si

Typical Gate Charge @ Vgs:

17 nC @ 10 V

Maximum Operating Temperature:

+175 °C

Length:

5mm

Minimum Operating Temperature:

-55 °C

Height:

1.55mm