P-Channel MOSFET, 6 A, 12 V, 3-Pin SOT-23 SI2333DDS-T1-GE3

Channel Type:

P

Maximum Continuous Drain Current:

6 A

Maximum Drain Source Voltage:

12 V

Package Type:

SOT-23

Mounting Type:

Surface Mount

Pin Count:

3

Maximum Drain Source Resistance:

19 Ω

Channel Mode:

Enhancement

Minimum Gate Threshold Voltage:

0.4V

Maximum Power Dissipation:

1.7 W

Transistor Configuration:

Single

Maximum Gate Source Voltage:

-8 V, +8 V

Transistor Material:

Si

Number of Elements per Chip:

1

Maximum Operating Temperature:

+150 °C

Length:

3.04mm

Typical Gate Charge @ Vgs:

23 nC @ 8 V

Width:

1.4mm

Minimum Operating Temperature:

-55 °C

Height:

1.02mm