Vishay SQUN702E-T1_GE3 3 N/P-Channel-Channel MOSFET, 30 A, 30 A, 20 A, 200 (Channel 3) V, 40 (Channel 1) V, 40 (Channel 2) V, 10-Pin Triple

Channel Type:

N, P

Maximum Continuous Drain Current:

30 A, 30 A, 20 A

Maximum Drain Source Voltage:

200 (Channel 3) V, 40 (Channel 1) V, 40 (Channel 2) V

Package Type:

Triple Die

Mounting Type:

Surface Mount

Pin Count:

10

Maximum Drain Source Resistance:

0.0135 (Channel 2) Ω, 0.048 (Channel 1) Ω, 0.06 (Channel 3) Ω

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

2.5 (Channel 1) V, 2.5 (Channel 2) V, 3.5 (Channel 3) V

Minimum Gate Threshold Voltage:

1.5 (Channel 1) V, 1.5 (Channel 2) V, 2.5 (Channel 3) V

Maximum Power Dissipation:

48 W, 48 W, 60 W

Transistor Configuration:

Common Drain

Maximum Gate Source Voltage:

20 V

Number of Elements per Chip:

3

Typical Gate Charge @ Vgs:

14 nC @ 100 V (Channel 3), 23 nC @ 20 V (Channel 2), 30.2 nC @ 20 V (Channel 1)

Maximum Operating Temperature:

+175 °C

Automotive Standard:

AEC-Q101

Minimum Operating Temperature:

-55 °C