Dual N-Channel MOSFET, 7.5 A, 30 V, 8-Pin SOIC SI4214DDY-T1-GE3

Channel Type:

N

Maximum Continuous Drain Current:

7.5 A

Maximum Drain Source Voltage:

30 V

Package Type:

SOIC

Mounting Type:

Surface Mount

Pin Count:

8

Maximum Drain Source Resistance:

19.5 mΩ

Channel Mode:

Enhancement

Minimum Gate Threshold Voltage:

1.2V

Maximum Power Dissipation:

2 W

Transistor Configuration:

Isolated

Maximum Gate Source Voltage:

-20 V, +20 V

Transistor Material:

Si

Length:

5mm

Width:

4mm

Maximum Operating Temperature:

+150 °C

Typical Gate Charge @ Vgs:

14.5 nC @ 10 V, 7.1 nC @ 4.5 V

Number of Elements per Chip:

2

Minimum Operating Temperature:

-55 °C

Height:

1.5mm