P-Channel MOSFET, 10.4 A, 30 V, 6-Pin SOT-363 SIA449DJ-T1-GE3

Channel Type:

P

Maximum Continuous Drain Current:

10.4 A

Maximum Drain Source Voltage:

30 V

Package Type:

SOT-363

Series:

TrenchFET

Mounting Type:

Surface Mount

Pin Count:

6

Maximum Drain Source Resistance:

38 mΩ

Channel Mode:

Enhancement

Minimum Gate Threshold Voltage:

0.6V

Maximum Power Dissipation:

19 W

Transistor Configuration:

Single

Maximum Gate Source Voltage:

-12 V, +12 V

Number of Elements per Chip:

1

Length:

2.15mm

Transistor Material:

Si

Width:

2.15mm

Typical Gate Charge @ Vgs:

48 nC @ 10 V

Maximum Operating Temperature:

+150 °C

Height:

0.8mm

Minimum Operating Temperature:

-55 °C