N-Channel MOSFET, 5.6 A, 100 V, 3-Pin D2PAK IRF510SPBF

Channel Type:

N

Maximum Continuous Drain Current:

5.6 A

Maximum Drain Source Voltage:

100 V

Package Type:

D2PAK (TO-263)

Mounting Type:

Surface Mount

Pin Count:

3

Maximum Drain Source Resistance:

540 mΩ

Channel Mode:

Enhancement

Minimum Gate Threshold Voltage:

2V

Maximum Power Dissipation:

3.7 W

Transistor Configuration:

Single

Maximum Gate Source Voltage:

-20 V, +20 V

Transistor Material:

Si

Typical Gate Charge @ Vgs:

8.3 nC @ 10 V

Maximum Operating Temperature:

+175 °C

Number of Elements per Chip:

1

Height:

4.83mm

Minimum Operating Temperature:

-55 °C