N-Channel MOSFET, 180 A, 100 V, 3-Pin D2PAK IRFS4010TRLPBF

Channel Type:

N

Maximum Continuous Drain Current:

180 A

Maximum Drain Source Voltage:

100 V

Series:

HEXFET

Package Type:

D2PAK (TO-263)

Mounting Type:

Surface Mount

Pin Count:

3

Maximum Drain Source Resistance:

4.7 mΩ

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

4V

Minimum Gate Threshold Voltage:

2V

Maximum Power Dissipation:

375 W

Maximum Gate Source Voltage:

-20 V, +20 V

Typical Gate Charge @ Vgs:

143 nC @ 10 V

Maximum Operating Temperature:

+175 °C

Width:

9.65mm

Length:

10.67mm

Number of Elements per Chip:

1

Minimum Operating Temperature:

-55 °C

Height:

4.83mm

Forward Diode Voltage:

1.3V