Dual N/P-Channel-Channel MOSFET, 4.3 A, 6 A, 30 V, 8-Pin SOIC SI4532CDY-T1-GE3

Channel Type:

N, P

Maximum Continuous Drain Current:

4.3 A, 6 A

Maximum Drain Source Voltage:

30 V

Package Type:

SOIC

Mounting Type:

Surface Mount

Pin Count:

8

Maximum Drain Source Resistance:

65 mΩ, 140 mΩ

Channel Mode:

Enhancement

Minimum Gate Threshold Voltage:

1V

Maximum Power Dissipation:

2.78 W

Transistor Configuration:

Isolated

Maximum Gate Source Voltage:

-20 V, +20 V

Maximum Operating Temperature:

+150 °C

Length:

5mm

Number of Elements per Chip:

2

Typical Gate Charge @ Vgs:

6 nC @ 10 V, 7.8 nC @ 10 V

Transistor Material:

Si

Width:

4mm

Height:

1.5mm

Minimum Operating Temperature:

-55 °C