N-Channel MOSFET, 195 A, 60 V, 3-Pin TO-220AB IRFB7530PBF

Channel Type:

N

Maximum Continuous Drain Current:

195 A

Maximum Drain Source Voltage:

60 V

Package Type:

TO-220AB

Series:

StrongIRFET

Mounting Type:

Through Hole

Pin Count:

3

Maximum Drain Source Resistance:

2 mΩ

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

3.7V

Minimum Gate Threshold Voltage:

2.1V

Maximum Power Dissipation:

375 W

Transistor Configuration:

Single

Maximum Gate Source Voltage:

-20 V, +20 V

Length:

10.67mm

Maximum Operating Temperature:

+175 °C

Typical Gate Charge @ Vgs:

274 nC @ 10 V

Number of Elements per Chip:

1

Width:

4.83mm

Transistor Material:

Si

Minimum Operating Temperature:

-55 °C

Height:

16.51mm

Forward Diode Voltage:

1.2V