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bss223pwh6327xtsa1 P-Channel MOSFET, 310 mA, 20 V, 3-Pin SOT-323 Infineon BSS223PWH6327XTSA1
bss223pwh6327xtsa1 P-Channel MOSFET, 310 mA, 20 V, 3-Pin SOT-323 Infineon BSS223PWH6327XTSA1
bss223pwh6327xtsa1 P-Channel MOSFET, 310 mA, 20 V, 3-Pin SOT-323 Infineon BSS223PWH6327XTSA1
bss223pwh6327xtsa1 P-Channel MOSFET, 310 mA, 20 V, 3-Pin SOT-323 Infineon BSS223PWH6327XTSA1
Infineon OptiMOS™P P-Channel Power MOSFETs The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.
Enhancement mode
Avalanche rated
Low switching and conduction power losses
Pb-free lead plating; RoHS compliant
Standard packages
OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C
Infineon

P-Channel MOSFET, 310 mA, 20 V, 3-Pin SOT-323 BSS223PWH6327XTSA1

Manufacturer:
Infineon
Manufacturer Part No:
BSS223PWH6327XTSA1
Enrgtech Part No:
ET14089339
Warranty:
Manufacturer
£ 0.08

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Channel Type:

P

Maximum Continuous Drain Current:

310 mA

Maximum Drain Source Voltage:

20 V

Series:

OptiMOS P

Package Type:

SOT-323

Mounting Type:

Surface Mount

Pin Count:

3

Maximum Drain Source Resistance:

2.1 Ω

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

1.2V

Minimum Gate Threshold Voltage:

0.6V

Maximum Power Dissipation:

250 mW

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