

N-channel MOSFETs 75 V - 200 V, You have now entered one of the world's foremost standard MOS portfolios, Looking for high-reliability MOSFETs in the 75 V to 200 V range that simplify design-in? Our devices are perfect for space- and power-critical applications, delivering excellent switching performance and class-leading safe operating area (SOA). For example, our LFPAK power MOSFET range boasts ultra-low RDSon, high-speed switching and voltage ratings up to 200 V.
100 V N-channel Trench MOSFET, N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Logic level compatible
Very fast switching
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 2 kV HBM
AEC-Q101 qualified
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
Very fast switching
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 2 kV HBM
AEC-Q101 qualified
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits

N-Channel MOSFET, 1 A, 100 V, 3-Pin SOT-23 PMV280ENEAR
Manufacturer:
Nexperia
Manufacturer Part No:
PMV280ENEAR
Enrgtech Part No:
ET16800558
Warranty:
Manufacturer
£ 0.18
Checking for live stock
Channel Type:
N
Maximum Continuous Drain Current:
1 A
Maximum Drain Source Voltage:
100 V
Package Type:
SOT-23
Mounting Type:
Surface Mount
Pin Count:
3
Maximum Drain Source Resistance:
892 mΩ
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
2.7V
Minimum Gate Threshold Voltage:
1.3V
Maximum Power Dissipation:
5 W
Transistor Configuration:
Single