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pmv280enear N-Channel MOSFET, 1 A, 100 V, 3-Pin SOT-23 Nexperia PMV280ENEAR
pmv280enear N-Channel MOSFET, 1 A, 100 V, 3-Pin SOT-23 Nexperia PMV280ENEAR
N-channel MOSFETs 75 V - 200 V, You have now entered one of the world's foremost standard MOS portfolios, Looking for high-reliability MOSFETs in the 75 V to 200 V range that simplify design-in? Our devices are perfect for space- and power-critical applications, delivering excellent switching performance and class-leading safe operating area (SOA). For example, our LFPAK power MOSFET range boasts ultra-low RDSon, high-speed switching and voltage ratings up to 200 V. 100 V N-channel Trench MOSFET, N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Logic level compatible
Very fast switching
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 2 kV HBM
AEC-Q101 qualified
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
Nexperia

N-Channel MOSFET, 1 A, 100 V, 3-Pin SOT-23 PMV280ENEAR

Manufacturer:
Nexperia
Manufacturer Part No:
PMV280ENEAR
Enrgtech Part No:
ET16800558
Warranty:
Manufacturer
£ 0.18

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Channel Type:

N

Maximum Continuous Drain Current:

1 A

Maximum Drain Source Voltage:

100 V

Package Type:

SOT-23

Mounting Type:

Surface Mount

Pin Count:

3

Maximum Drain Source Resistance:

892 mΩ

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

2.7V

Minimum Gate Threshold Voltage:

1.3V

Maximum Power Dissipation:

5 W

Transistor Configuration:

Single

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