Dual N/P-Channel-Channel MOSFET, 8 A, 40 V, 8-Pin SOIC SI4554DY-T1-GE3

Channel Type:

N, P

Maximum Continuous Drain Current:

8 A

Maximum Drain Source Voltage:

40 V

Package Type:

SOIC

Mounting Type:

Surface Mount

Pin Count:

8

Maximum Drain Source Resistance:

27 mΩ, 34 mΩ

Channel Mode:

Enhancement

Minimum Gate Threshold Voltage:

1V

Maximum Power Dissipation:

3.2 W

Transistor Configuration:

Isolated

Maximum Gate Source Voltage:

-20 V, +20 V

Typical Gate Charge @ Vgs:

13.3 nC @ 10 V, 41.5 nC @ 10 V

Transistor Material:

Si

Maximum Operating Temperature:

+150 °C

Number of Elements per Chip:

2

Width:

4mm

Length:

5mm

Height:

1.5mm

Minimum Operating Temperature:

-55 °C