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ipl60r210p6auma1 N-Channel MOSFET, 19.2 A, 600 V, 5-Pin ThinkPAK 8 x 8 Infineon IPL60R210P6AUMA1
ipl60r210p6auma1 N-Channel MOSFET, 19.2 A, 600 V, 5-Pin ThinkPAK 8 x 8 Infineon IPL60R210P6AUMA1

600V CoolMOSP6 Power Transistor

Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS™ P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. Summary of Features Reduced gate charge (Q g)
Higher V th
Good body diode ruggedness
Optimized integrated R g
Improved dv/dt from 50V/ns
CoolMOS™ quality with over 12 years manufacturing experience in superjunction technology Benefits
  • Improved effciency especially in light load condition

  • Better efficiency in soft switching applications due to earlier turn-off

  • Suitable for hard- & soft-switching topologies

  • Optimized balance of efficiency and ease of use and good controllability of switching behavior

  • High robustness and better efficiency

  • Outstanding quality & reliability
Potential Applications
  • PFC stages for server, telecom rectifier, PC silverbox, gaming consoles

  • PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles
Infineon

N-Channel MOSFET, 19.2 A, 600 V, 5-Pin ThinkPAK 8 x 8 IPL60R210P6AUMA1

Manufacturer:
Infineon
Manufacturer Part No:
IPL60R210P6AUMA1
Enrgtech Part No:
ET21606554
Warranty:
Manufacturer
£ 0.94

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Channel Type:

N

Maximum Continuous Drain Current:

19.2 A

Maximum Drain Source Voltage:

600 V

Series:

CoolMOS™ P6

Package Type:

ThinkPAK 8 x 8

Mounting Type:

Surface Mount

Pin Count:

5

Maximum Drain Source Resistance:

0.21 O

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

4.5V

Number of Elements per Chip:

1

Transistor Material:

Si

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