P-Channel MOSFET, 80 A, 60 V, 3-Pin D2PAK SPB80P06PGATMA1

Channel Type:

P

Maximum Continuous Drain Current:

80 A

Maximum Drain Source Voltage:

60 V

Series:

SIPMOS®

Package Type:

D2PAK (TO-263)

Mounting Type:

Surface Mount

Pin Count:

3

Maximum Drain Source Resistance:

23 mΩ

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

4V

Minimum Gate Threshold Voltage:

2.1V

Maximum Power Dissipation:

340 W

Transistor Configuration:

Single

Maximum Gate Source Voltage:

-20 V, +20 V

Width:

9.45mm

Maximum Operating Temperature:

+175 °C

Length:

10.31mm

Typical Gate Charge @ Vgs:

115 nC @ 10 V

Number of Elements per Chip:

1

Minimum Operating Temperature:

-55 °C

Height:

4.57mm