P-channel MOSFETs, The perfect fit for your design when N-channels simply aren’t suitable, Our extensive MOSFET catalog also includes many P-channel device families, based on Nexperia’s leading Trench technology. Rated from 12 V to 70 V and housed in low- and medium-power packages, they offer our familiar blend of high efficiency and high reliability.
12 V, P-channel Trench MOSFET, P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Trench MOSFET technology
Leadless ultra small and ultra thin SMD plastic package: 1.1 x 1.0 x 0.37 mm
Exposed drain pad for excellent thermal conduction
ElectroStatic Discharge (ESD) protection 1.5 kV HBM
Drain-source on-state resistance RDSon = 59 mΩ
Very low gate-source threshold voltage for portable applications VGS(th) = -0.68 V
Leadless ultra small and ultra thin SMD plastic package: 1.1 x 1.0 x 0.37 mm
Exposed drain pad for excellent thermal conduction
ElectroStatic Discharge (ESD) protection 1.5 kV HBM
Drain-source on-state resistance RDSon = 59 mΩ
Very low gate-source threshold voltage for portable applications VGS(th) = -0.68 V
P-Channel MOSFET, 3.2 A, -12 V, 4-Pin DFN1010D-3 PMXB65UPEZ
Manufacturer:
Nexperia
Manufacturer Part No:
PMXB65UPEZ
Enrgtech Part No:
ET16800573
Warranty:
Manufacturer
£ 0.05
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Channel Type:
P
Maximum Continuous Drain Current:
3.2 A
Maximum Drain Source Voltage:
-12 V
Package Type:
DFN1010D-3
Mounting Type:
Surface Mount
Pin Count:
4
Maximum Drain Source Resistance:
880 mΩ
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
-1V
Minimum Gate Threshold Voltage:
-0.4V
Maximum Power Dissipation:
8330 mW
Transistor Configuration:
Single
