UltraFET® MOSFET, Fairchild Semiconductor
UItraFET® Trench MOSFET combine characteristics that enable benchmark efficiency in power conversion applications. The device is capable of withstanding high energy in the avalanche mode, and the diode exhibits very low reverse recovery time and stored charge. Optimised for efficiency at high frequencies, lowest RDS(on), low ESR, and low total and Miller gate charge.
Applications in high frequency DC to DC converters, switching regulators, motor drivers, low-voltage bus switches, and power management.
Applications in high frequency DC to DC converters, switching regulators, motor drivers, low-voltage bus switches, and power management.
N-Channel MOSFET, 20 A, 200 V, 8-Pin PQFN8 FDMS2672
£ 2.27
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Channel Type:
N
Maximum Continuous Drain Current:
20 A
Maximum Drain Source Voltage:
200 V
Package Type:
PQFN8
Series:
UltraFET
Mounting Type:
Surface Mount
Pin Count:
8
Maximum Drain Source Resistance:
156 mΩ
Channel Mode:
Enhancement
Minimum Gate Threshold Voltage:
2V
Maximum Power Dissipation:
78 W
Transistor Configuration:
Single
