N-Channel MOSFET, 19 A, 600 V, 3-Pin D2PAK SIHB22N60EF-GE3

Channel Type:

N

Maximum Continuous Drain Current:

19 A

Maximum Drain Source Voltage:

600 V

Package Type:

D2PAK (TO-263)

Mounting Type:

Surface Mount

Pin Count:

3

Maximum Drain Source Resistance:

182 mΩ

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

4V

Minimum Gate Threshold Voltage:

2V

Maximum Power Dissipation:

179 W

Transistor Configuration:

Single

Maximum Gate Source Voltage:

±30 V

Width:

9.65mm

Typical Gate Charge @ Vgs:

48 nC @ 10 V

Number of Elements per Chip:

1

Length:

10.41mm

Maximum Operating Temperature:

+150 °C

Height:

4.57mm

Forward Diode Voltage:

1.2V

Minimum Operating Temperature:

-55 °C