Dual N/P-Channel MOSFET, ON Semiconductor
The NTJD1155L is a dual channel MOSFET. Featuring both P and N-channel’s into a single package, this MOSFET is brilliant for low control signal, low battery voltages and high load currents. The N-channel features internal ESD protection and can be driven by logic signals as low as 1.5V, while the P-Channel is designed to be used on load switching applications. The P-channel also designed with ON semi’s trench technology.
Dual N/P-Channel-Channel MOSFET, 1.3 A, 8 V, 6-Pin SOT-363 NTJD1155LT1G
Manufacturer:
onsemi
Manufacturer Part No:
NTJD1155LT1G
Enrgtech Part No:
ET11889280
Warranty:
Manufacturer
£ 0.25
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Channel Type:
N, P
Maximum Continuous Drain Current:
1.3 A
Maximum Drain Source Voltage:
8 V
Package Type:
SOT-363
Mounting Type:
Surface Mount
Pin Count:
6
Maximum Drain Source Resistance:
320 mΩ
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
1V
Maximum Power Dissipation:
400 mW
Transistor Configuration:
N+P Loadswitch
Maximum Gate Source Voltage:
+8 V
