The Infineon design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.
Advanced Planar Technology
Dual N Channel MOSFET Low On-Resistance
Logic Level Gate Drive
Dual N Channel MOSFET Low On-Resistance
Logic Level Gate Drive
Silicon N-Channel MOSFET, 3 A, 50 V, 8-Pin SO-8 AUIRF7103QTR
Manufacturer:
Infineon
Manufacturer Part No:
AUIRF7103QTR
Enrgtech Part No:
ET21632775
Warranty:
Manufacturer
£ 0.42
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Channel Type:
N
Maximum Continuous Drain Current:
3 A
Maximum Drain Source Voltage:
50 V
Series:
HEXFET
Package Type:
SO-8
Mounting Type:
Surface Mount
Pin Count:
8
Maximum Drain Source Resistance:
0.13 Ω
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
3V
Transistor Material:
Silicon
Number of Elements per Chip:
1
