N-Channel MOSFET, 25 A, 200 V, 3-Pin TO-220AB IRFB5620PBF

Channel Type:

N

Maximum Continuous Drain Current:

25 A

Maximum Drain Source Voltage:

200 V

Series:

HEXFET

Package Type:

TO-220AB

Mounting Type:

Through Hole

Pin Count:

3

Maximum Drain Source Resistance:

73 mΩ

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

5V

Minimum Gate Threshold Voltage:

3V

Maximum Power Dissipation:

14 W

Transistor Configuration:

Single

Maximum Gate Source Voltage:

-20 V, +20 V

Transistor Material:

Si

Length:

10.67mm

Maximum Operating Temperature:

+175 °C

Number of Elements per Chip:

1

Typical Gate Charge @ Vgs:

25 nC @ 10 V

Width:

4.83mm

Height:

9.02mm

Minimum Operating Temperature:

-55 °C

3D Model:

https://www.traceparts.com/els/rs-components/en/api/viewer/3d?SupplierID=RS_COMPONENTS&PartNumber=84415&DisplayLogo=False