The Infineon AUIRFP4110 specifically designed for Automotive applications, this HEXFET power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
Advanced process technology
Ultra-low on-resistance
175°C operating temperature
Fast switching
Repetitive avalanche allowed up to Tjmax
Ultra-low on-resistance
175°C operating temperature
Fast switching
Repetitive avalanche allowed up to Tjmax
Dual N-Channel MOSFET Transistor & Diode, 180 A, 100 V, 3-Pin TO-247AC AUIRFP4110
Manufacturer:
Infineon
Manufacturer Part No:
AUIRFP4110
Enrgtech Part No:
ET21626869
Warranty:
Manufacturer
£ 2.41
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Channel Type:
N
Maximum Continuous Drain Current:
180 A
Maximum Drain Source Voltage:
100 V
Series:
HEXFET
Package Type:
TO-247AC
Mounting Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance:
0.045 O
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
4V
Number of Elements per Chip:
2
Transistor Material:
Si
