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sihk085n60ef-t1ge3 Dual Silicon N-Channel MOSFET, 30 A, 650 V, 8-Pin PowerPAK 10 x 12 Vishay SIHK085N60EF-T1GE3
sihk085n60ef-t1ge3 Dual Silicon N-Channel MOSFET, 30 A, 650 V, 8-Pin PowerPAK 10 x 12 Vishay SIHK085N60EF-T1GE3
sihk085n60ef-t1ge3 Dual Silicon N-Channel MOSFET, 30 A, 650 V, 8-Pin PowerPAK 10 x 12 Vishay SIHK085N60EF-T1GE3
sihk085n60ef-t1ge3 Dual Silicon N-Channel MOSFET, 30 A, 650 V, 8-Pin PowerPAK 10 x 12 Vishay SIHK085N60EF-T1GE3
The Vishay EF series power MOSFET with fast body diode and 4 generation E series technology which has reduced switching and conduction losses and it is used in applications such as switch mode power supplies, server power supplies and power factor correct Low effective capacitance
Avalanche energy rated
Low figure of merit
Vishay

Dual Silicon N-Channel MOSFET, 30 A, 650 V, 8-Pin PowerPAK 10 x 12 SIHK085N60EF-T1GE3

Manufacturer:
Vishay
Manufacturer Part No:
SIHK085N60EF-T1GE3
Enrgtech Part No:
ET26056161
Warranty:
Manufacturer
£ 8.17

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Channel Type:

N

Maximum Continuous Drain Current:

30 A

Maximum Drain Source Voltage:

650 V

Package Type:

PowerPAK 10 x 12

Mounting Type:

PCB Mount

Pin Count:

8

Channel Mode:

Enhancement

Number of Elements per Chip:

2

Transistor Material:

Silicon

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