


N-Channel Power MOSFET 60V to 80V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

N-Channel MOSFET, 43 A, 60 V, 3-Pin D2PAK IRFS3806TRLPBF
Manufacturer:
Infineon
Manufacturer Part No:
IRFS3806TRLPBF
Enrgtech Part No:
ET14011974
Warranty:
Manufacturer
£ 0.89
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Channel Type:
N
Maximum Continuous Drain Current:
43 A
Maximum Drain Source Voltage:
60 V
Package Type:
D2PAK (TO-263)
Series:
HEXFET
Mounting Type:
Surface Mount
Pin Count:
3
Maximum Drain Source Resistance:
15.8 mΩ
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
4V
Minimum Gate Threshold Voltage:
2V
Maximum Power Dissipation:
71 W