The Infineon CoolSiC MOSFET 650V G1 epitomises innovation in semiconductor technology. This high performance device leverages robust silicon carbide technology, optimising efficiency and reliability for applications requiring superior thermal performance and stability. Designed specifically for demanding environments, it excels in high temperature operations while simplifying system designs. With its advanced features, the MOSFET ensures that users can achieve excellent power density and conserve space, making it an ideal choice for a range of applications including electric vehicle charging infrastructure, solar inverters, and efficient power supplies. The CoolSiC MOSFET 650V G1 is more than just a component it embodies a commitment to performance and reliability, perfect for modern electronic solutions. Optimised for high frequency applications
Robust thermal performance for harsh environments
Enhanced reliability for extended life
Low switching losses improve efficiency
Compact design reduces system footprint
Industry leading avalanche capability for fault tolerance
User friendly integration with standard drivers