The Infineon BGSX22G6U10 RF CMOS switch is specifically designed for GSM, WCDMA, LTE and 5G applications. This DPDT offers low insertion loss even at high frequencies of up to 7.125 GHz, low harmonic generation along with high isolation between RF ports. In addition, the fast switching speed enables 5G-SRS applications. The switch is controlled via a GPIO interface. The on-chip controller allows power-supply voltages from 1.6V to 3.6V. The switch features direct-connect-to-battery functionality and DC-free RF ports. Unlike GaAs technology, external DC blocking capacitors at the RF Ports are only required if DC voltage is applied externally. The device has a very small size of only 1.1mm x 1.5mm and a thickness of 0.60mm. Low current consumption
Low insertion loss and high port to port isolation up to 7.125 GHz
Fast switching speed to enable 5G-SRS applications