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idb30e60atma1 Infineon Switching Diode, 3-Pin D2PAK (TO-263) IDB30E60ATMA1
idb30e60atma1 Infineon Switching Diode, 3-Pin D2PAK (TO-263) IDB30E60ATMA1
idb30e60atma1 Infineon Switching Diode, 3-Pin D2PAK (TO-263) IDB30E60ATMA1
Fast Switching Emitter Controlled Diodes, Infineon The Infineon switching emitter controlled diodes are the Rapid 1 and the Rapid 2 families also the 600 V/1200 V Ultra-soft diodes. The diodes work in various applications from Telecom, UPS, welding, AC-DC and the Ultra-soft version works on motor drive applications up to 30 kHz. Rapid 1 diode switches between 18kHz and 40kHz
1.35V temperature-stable forward voltage
Ideal for Power Factor Correction (PFC) topologies

The Rapid 2 diode switches between 40 kHz and 100 kHz
Low reverse recovery charge: forward voltage ratio for BiC performance
Low reverse recovery time
Low turn-on losses on the boost switch

Ultra-fast Diode 600 V/1200 V Emitter Controlled technology
Qualified according to JEDEC Standard
Good EMI behaviour
Low conduction losses
Easy paralleling
Infineon

Switching Diode, 3-Pin D2PAK (TO-263) IDB30E60ATMA1

Manufacturer:
Infineon
Manufacturer Part No:
IDB30E60ATMA1
Enrgtech Part No:
ET10097549
Warranty:
Manufacturer
£ 0.99

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Diode Configuration:

Single

Number of Elements per Chip:

1

Mounting Type:

Surface Mount

Package Type:

D2PAK (TO-263)

Diode Technology:

Silicon Junction

Pin Count:

3

Maximum Forward Voltage Drop:

2V

Minimum Operating Temperature:

-40 °C

Maximum Operating Temperature:

+175 °C

Length:

10.31mm

Width:

9.45mm

Height:

4.57mm

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