The Infineon discrete hetero-junction bipolar transistor (HBT) specifically designed for high performance 5 GHz band. It is satellite communication systems are satellite radio (SDARs, DAB), navigation systems (e.g. GPS, Glonass, Beidou, Galileo).
High gain Gms 22.5 dB at 5.5 GHz, 1.8 V, 10 mA
OIP3 22 dBm at 5.5 GHz, 1.8 V, 10 mA
IC max +35mA
OIP3 22 dBm at 5.5 GHz, 1.8 V, 10 mA
IC max +35mA
BFP840ESDH6327XTSA1 NPN RF Bipolar Transistor, 35 mA, 2.25 V SOT-343
Manufacturer:
InfineonManufacturer Part No:
BFP840ESDH6327XTSA1
Enrgtech Part No:
ET13874613
Warranty:
Manufacturer
£ 0.10
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Transistor Type:
NPN
Maximum DC Collector Current:
35 mA
Maximum Collector Emitter Voltage:
2.25 V
Package Type:
SOT-343
Mounting Type:
Surface Mount
