HGT1S10N120BNST IGBT, 80 A 1200 V, 3-Pin D2PAK (TO-263), Surface Mount

Maximum Continuous Collector Current:

80 A

Maximum Collector Emitter Voltage:

1200 V

Maximum Gate Emitter Voltage:

±20V

Maximum Power Dissipation:

298 W

Package Type:

D2PAK (TO-263)

Mounting Type:

Surface Mount

Channel Type:

N

Pin Count:

3

Switching Speed:

1MHz

Transistor Configuration:

Single

Dimensions:

10.67 x 11.33 x 4.83mm

Minimum Operating Temperature:

-55 °C

Maximum Operating Temperature:

+150 °C