The Infineon new TRENCHSTOPIGBT technology redefines “Best-in-class” IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the market’s high efficiency demands of tomorrow. It has best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability. 50V increase in the bus voltage possible without compromising reliability.
650V breakthrough voltage
Compared to Infineon’s Best-in-class HighSpeed 3 family
Factor 2.5 lower Q g
Factor 2 reduction in switching losses
200mV reduction in V CE(sat)
Low C OES/E OSS
Mild positive temperature coefficient V CE(sat)
Temperature stabilit
Compared to Infineon’s Best-in-class HighSpeed 3 family
Factor 2.5 lower Q g
Factor 2 reduction in switching losses
200mV reduction in V CE(sat)
Low C OES/E OSS
Mild positive temperature coefficient V CE(sat)
Temperature stabilit
IGW50N65F5FKSA1 IGBT Transistor Module, 80 A 650 V PG-TO247-3
Manufacturer:
InfineonManufacturer Part No:
IGW50N65F5FKSA1
Enrgtech Part No:
ET16792970
Warranty:
Manufacturer
£ 2.48
Checking for live stock
Maximum Continuous Collector Current:
80 A
Maximum Collector Emitter Voltage:
650 V
Maximum Gate Emitter Voltage:
±20V
Maximum Power Dissipation:
305 W
Package Type:
PG-TO247-3
