Using the novel field stop 4th generation IGBT technology. AFGB40T65SQDN offers the optimum performance with both low conduction loss and switching loss for a high efficiency operation in various applications.
VCE(sat) = 1.6 V (typ.) @ IC = 40 A
Low VF soft recovery co-packaged diode
For automotive
Low conduction loss
Low noise and conduction loss
Applications
Automotive On Board Charge
Automotive DC/DC converter for HEV
End Products
EV/PHEV
Low VF soft recovery co-packaged diode
For automotive
Low conduction loss
Low noise and conduction loss
Applications
Automotive On Board Charge
Automotive DC/DC converter for HEV
End Products
EV/PHEV
AFGB40T65SQDN IGBT, 80 A 650 V, 3-Pin D2PAK, Surface Mount
Manufacturer:
onsemiManufacturer Part No:
AFGB40T65SQDN
Enrgtech Part No:
ET17762012
Warranty:
Manufacturer
£ 4.05
Checking for live stock
Maximum Continuous Collector Current:
80 A
Maximum Collector Emitter Voltage:
650 V
Maximum Gate Emitter Voltage:
±20V
Number of Transistors:
1
Maximum Power Dissipation:
238 W
Package Type:
D2PAK
Mounting Type:
Surface Mount
Channel Type:
N
Pin Count:
3
Transistor Configuration:
Single
Dimensions:
10.67 x 9.65 x 4.58mm
Automotive Standard:
AEC-Q101
