AFGB40T65SQDN IGBT, 80 A 650 V, 3-Pin D2PAK, Surface Mount

Maximum Continuous Collector Current:

80 A

Maximum Collector Emitter Voltage:

650 V

Maximum Gate Emitter Voltage:

±20V

Number of Transistors:

1

Maximum Power Dissipation:

238 W

Package Type:

D2PAK

Mounting Type:

Surface Mount

Channel Type:

N

Pin Count:

3

Transistor Configuration:

Single

Dimensions:

10.67 x 9.65 x 4.58mm

Automotive Standard:

AEC-Q101

Energy Rating:

22.3mJ

Maximum Operating Temperature:

+175 °C

Gate Capacitance:

2495pF

Minimum Operating Temperature:

-55 °C