The Bourns IGBT device combines technology from a MOS gate and a bipolar transistor for an optimum component for high voltage and high current applications. This device uses Trench-Gate Field-Stop technology providing greater control of dynamic characteristics with a lower Collector-Emitter Saturation Voltage (VCE(sat)) and fewer switching losses. In addition, this structure gives a lower thermal resistance R(th).
600 V, 30 A, Low Collector-Emitter Saturation Voltage (VCE(sat))
Trench-Gate Field-Stop technology
Optimized for conduction
RoHS compliant
Trench-Gate Field-Stop technology
Optimized for conduction
RoHS compliant
BIDW30N60T Single Diode IGBT, 30 A 600 V TO-247
£ 2.77
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Maximum Continuous Collector Current:
30 A
Maximum Collector Emitter Voltage:
600 V
Maximum Gate Emitter Voltage:
±20V
Number of Transistors:
1
Maximum Power Dissipation:
230 W
Package Type:
TO-247
Configuration:
Single Diode
