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igb50n65h5atma1 Infineon IGB50N65H5ATMA1 IGBT, 80 A 650 V, 3-Pin TO-263
igb50n65h5atma1 Infineon IGB50N65H5ATMA1 IGBT, 80 A 650 V, 3-Pin TO-263
The Infineon TRENCHSTOP IGBT5 technology redefines best-in-class IGBT resulting in lower junction and case temperature leading to higher device reliability by providing unmatched performance in terms of efficiency for hard switching applications. It has collector emitter voltage of 650 V and collector current of 80 A. Higher power density design
50V increase in the bus voltage possible without compromising reliability
Mild positive temperature coefficient
Infineon

IGB50N65H5ATMA1 IGBT, 80 A 650 V, 3-Pin TO-263

Manufacturer:
Infineon
Manufacturer Part No:
IGB50N65H5ATMA1
Enrgtech Part No:
ET21618137
Warranty:
Manufacturer
£ 1.39

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Maximum Continuous Collector Current:

80 A

Maximum Collector Emitter Voltage:

650 V

Maximum Gate Emitter Voltage:

20V

Number of Transistors:

1

Maximum Power Dissipation:

270 W

Package Type:

TO-263

Channel Type:

N

Pin Count:

3

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