The STMicroelectronics product is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low loss and the short circuit functionality is essential. Furthermore, the positive VCEsat temperature coefficient and the tight parameter distribution result in safer paralleling operation.
Maximum junction temperature of 175 degree C
10 μs of short circuit withstand time
Low VCEsat
Tight parameter distribution
Positive VCEsat temperature coefficient
Low thermal resistance
Soft and fast recovery antiparallel diode
10 μs of short circuit withstand time
Low VCEsat
Tight parameter distribution
Positive VCEsat temperature coefficient
Low thermal resistance
Soft and fast recovery antiparallel diode
STGYA50M120DF3 Single IGBT, 100 A 1200 V Max247
Manufacturer:
STMicroelectronics
Manufacturer Part No:
STGYA50M120DF3
Enrgtech Part No:
ET23425650
Warranty:
Manufacturer
£ 5.03
Checking for live stock
Maximum Continuous Collector Current:
100 A
Maximum Collector Emitter Voltage:
1200 V
Maximum Gate Emitter Voltage:
20V
Maximum Power Dissipation:
535 W
Number of Transistors:
1
Package Type:
Max247
Configuration:
Single
