The STMicroelectronics IGBT developed using an advanced proprietary trench gate field stop structure. This device is part of the H series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Moreover, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
Maximum junction temperature TJ = 175 °C
5 μs of short-circuit withstand time
Low VCE(sat) = 2.1 V (typ.) @ IC = 50 A
Tight parameter distribution
Positive VCE(sat) temperature coefficient
Low thermal resistance
Very fast recovery antiparallel diode
5 μs of short-circuit withstand time
Low VCE(sat) = 2.1 V (typ.) @ IC = 50 A
Tight parameter distribution
Positive VCE(sat) temperature coefficient
Low thermal resistance
Very fast recovery antiparallel diode
STGYA50H120DF2 Series IGBT, 50 A 1200 V Max247 long leads
Manufacturer:
STMicroelectronics
Manufacturer Part No:
STGYA50H120DF2
Enrgtech Part No:
ET22978836
Warranty:
Manufacturer
£ 5.22
Checking for live stock
Maximum Continuous Collector Current:
50 A
Maximum Collector Emitter Voltage:
1200 V
Maximum Gate Emitter Voltage:
±20V
Number of Transistors:
1
Maximum Power Dissipation:
535 W
Package Type:
Max247 long leads
Configuration:
Series
