The Bourns IGBT device combines technology from a MOS gate and a bipolar transistor for an optimum component for high voltage and high current applications. This device uses Trench-Gate Field-Stop technology providing greater control of dynamic characteristics with a lower conduction loss and fewer switching losses. In addition, this structure provides a positive temperature coefficient.
600 V, 20 A, Low Collector-Emitter Saturation Voltage (VCE(sat))
Trench-Gate Field-Stop technology
Optimized for conduction
Low switching loss
RoHS compliant
Trench-Gate Field-Stop technology
Optimized for conduction
Low switching loss
RoHS compliant
BIDW20N60T Single Diode IGBT, 20 A 600 V TO-247
Manufacturer:
Bourns
Manufacturer Part No:
BIDW20N60T
Enrgtech Part No:
ET24166417
Warranty:
Manufacturer
£ 1.15
Checking for live stock
Maximum Continuous Collector Current:
20 A
Maximum Collector Emitter Voltage:
600 V
Maximum Gate Emitter Voltage:
±20V
Maximum Power Dissipation:
192 W
Number of Transistors:
1
Package Type:
TO-247
Configuration:
Single Diode
