Infineon TrenchStop IGBT Transistors, 600 and 650V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
• Collector-emitter voltage range 600 to 650V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C
IKW75N65EL5XKSA1 IGBT, 75 A 650 V, 3-Pin TO-247, Through Hole
Manufacturer:
Infineon
Manufacturer Part No:
IKW75N65EL5XKSA1
Enrgtech Part No:
ET16897544
Warranty:
Manufacturer
£ 5.23
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Maximum Continuous Collector Current:
75 A
Maximum Collector Emitter Voltage:
650 V
Maximum Gate Emitter Voltage:
±20V
Maximum Power Dissipation:
536 W
Package Type:
TO-247
Mounting Type:
Through Hole
Channel Type:
N
Pin Count:
3
Transistor Configuration:
Single
Dimensions:
16.13 x 5.21 x 21.1mm
Energy Rating:
7.22mJ
Minimum Operating Temperature:
-40 °C
