

The STMicroelectronics Power MOSFET developed using Super MESH technology, achieved through optimization of well established strip based Power MESH layout. In addition to a significant reduction in on resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.
100% avalanche tested
Gate charge minimized
SD improved capability
Zener protected
Gate charge minimized
SD improved capability
Zener protected

Silicon N-Channel MOSFET, 300 mA, 600 V, 4-Pin SOT-223 STN1NK60Z
Manufacturer:
STMicroelectronicsManufacturer Part No:
STN1NK60Z
Enrgtech Part No:
ET10976201
Warranty:
Manufacturer
£ 0.22
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Channel Type:
N
Maximum Continuous Drain Current:
300 mA
Maximum Drain Source Voltage:
600 V
Package Type:
SOT-223
Series:
SuperMESH
Mounting Type:
Surface Mount
Pin Count:
4
Channel Mode:
Enhancement
Transistor Material:
Silicon
Number of Elements per Chip:
1