The Infineon power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
Advanced process technology
Ultra-low on-resistance Fast switching
Lead-Free, RoHS Compliant
Ultra-low on-resistance Fast switching
Lead-Free, RoHS Compliant
Silicon N-Channel MOSFET, 11 A, 55 V, 3-Pin DPAK AUIRFR9024NTRL
Manufacturer:
Infineon
Manufacturer Part No:
AUIRFR9024NTRL
Enrgtech Part No:
ET21632779
Warranty:
Manufacturer
£ 1.14
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Channel Type:
N
Maximum Continuous Drain Current:
11 A
Maximum Drain Source Voltage:
55 V
Series:
HEXFET
Package Type:
DPAK (TO-252)
Mounting Type:
Surface Mount
Pin Count:
3
Maximum Drain Source Resistance:
0.000175 Ω
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
4V
Transistor Material:
Silicon
Number of Elements per Chip:
1
