

Enhancement Mode Dual MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

Dual N/P-Channel-Channel MOSFET, 340 mA, 510 mA, 60 V, 6-Pin SOT-23 NDC7001C
Manufacturer:
onsemi
Manufacturer Part No:
NDC7001C
Enrgtech Part No:
ET13859446
Warranty:
Manufacturer
£ 0.31
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Channel Type:
N, P
Maximum Continuous Drain Current:
340 mA, 510 mA
Maximum Drain Source Voltage:
60 V
Package Type:
SOT-23
Mounting Type:
Surface Mount
Pin Count:
6
Maximum Drain Source Resistance:
4 Ω, 10 Ω
Channel Mode:
Enhancement
Minimum Gate Threshold Voltage:
1V
Maximum Power Dissipation:
960 mW
Transistor Configuration:
Isolated
Maximum Gate Source Voltage:
-20 V, +20 V