N-Channel MOSFET, 259 A, 100 V, 3-Pin TO-220 CSD19536KCS

Channel Type:

N

Maximum Continuous Drain Current:

259 A

Maximum Drain Source Voltage:

100 V

Package Type:

TO-220

Series:

NexFET

Mounting Type:

Through Hole

Pin Count:

3

Maximum Drain Source Resistance:

3.2 mΩ

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

3.2V

Minimum Gate Threshold Voltage:

2.1V

Maximum Power Dissipation:

375 W

Transistor Configuration:

Single

Maximum Gate Source Voltage:

-20 V, +20 V

Transistor Material:

Si

Length:

10.67mm

Typical Gate Charge @ Vgs:

118 nC @ 10 V

Number of Elements per Chip:

1

Maximum Operating Temperature:

+175 °C

Width:

4.7mm

Height:

16.51mm

Minimum Operating Temperature:

-55 °C