N-Channel MOSFET, 660 mA, 200 V Depletion, 3-Pin SOT-223 BSP149H6327XTSA1

Channel Type:

N

Maximum Continuous Drain Current:

660 mA

Maximum Drain Source Voltage:

200 V

Package Type:

SOT-223

Series:

SIPMOS®

Mounting Type:

Surface Mount

Pin Count:

3

Maximum Drain Source Resistance:

1.8 Ω

Channel Mode:

Depletion

Maximum Gate Threshold Voltage:

1V

Minimum Gate Threshold Voltage:

2.1V

Maximum Power Dissipation:

1.8 W

Transistor Configuration:

Single

Maximum Gate Source Voltage:

-20 V, +20 V

Typical Gate Charge @ Vgs:

11 nC @ 5 V

Length:

6.5mm

Maximum Operating Temperature:

+150 °C

Transistor Material:

Si

Number of Elements per Chip:

1

Width:

3.5mm

Forward Diode Voltage:

1.2V

Minimum Operating Temperature:

-55 °C

Height:

1.6mm

Automotive Standard:

AEC-Q101