N-Channel MOSFET, 210 A, 75 V, 3-Pin TO-220AB IRFB3077PBF

Channel Type:

N

Maximum Continuous Drain Current:

210 A

Maximum Drain Source Voltage:

75 V

Package Type:

TO-220AB

Series:

HEXFET

Mounting Type:

Through Hole

Pin Count:

3

Maximum Drain Source Resistance:

3 mΩ

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

4V

Minimum Gate Threshold Voltage:

2V

Maximum Power Dissipation:

370 W

Transistor Configuration:

Single

Maximum Gate Source Voltage:

-20 V, +20 V

Number of Elements per Chip:

1

Typical Gate Charge @ Vgs:

160 nC @ 10 V

Length:

10.66mm

Transistor Material:

Si

Width:

4.82mm

Maximum Operating Temperature:

+175 °C

Minimum Operating Temperature:

-55 °C

Height:

9.02mm