P-Channel MOSFET, 250 mA, 20 V, 3-Pin TSMT-3 RTU002P02T106

Channel Type:

P

Maximum Continuous Drain Current:

250 mA

Maximum Drain Source Voltage:

20 V

Package Type:

TSMT-3

Mounting Type:

Surface Mount

Pin Count:

3

Maximum Drain Source Resistance:

1.5 Ω

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

2V

Maximum Power Dissipation:

200 mW

Transistor Configuration:

Single

Maximum Gate Source Voltage:

-12 V, +12 V

Transistor Material:

Si

Number of Elements per Chip:

1

Length:

2.9mm

Width:

1.6mm

Height:

0.85mm