

IPB120P04P4L-03, -40V, P-Ch, 3.1 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™-P2
The Infineon p channel logic level MOSFET has highest current capability and 100 percent avalanche tested. It has lowest switching and conduction power losses for highest thermal efficiency.
Summary of Features
•P-channel - Logic Level - Enhancement mode
•AEC qualified
•MSL1 up to 260°C peak reflow
•175°C operating temperature
•Green package (RoHS compliant)
•100% Avalanche tested Benefits •No charge pump required for high side drive.
•Simple interface drive circuit
•World's lowest RDSon at 40V
•Highest current capability
•Lowest switching and conduction power losses for highest thermal efficiency
•Robust packages with superior quality and reliability
•Standard packages TO-252, TO-263, TO-220, TO-262 Potential Applications •High-Side MOSFETs for motor bridges (half-bridges, H-bridges, 3-phase-motors)
•Bridge configuration could be realized with 40V P-Channel as high side device with no need of charge pump
•AEC qualified
•MSL1 up to 260°C peak reflow
•175°C operating temperature
•Green package (RoHS compliant)
•100% Avalanche tested Benefits •No charge pump required for high side drive.
•Simple interface drive circuit
•World's lowest RDSon at 40V
•Highest current capability
•Lowest switching and conduction power losses for highest thermal efficiency
•Robust packages with superior quality and reliability
•Standard packages TO-252, TO-263, TO-220, TO-262 Potential Applications •High-Side MOSFETs for motor bridges (half-bridges, H-bridges, 3-phase-motors)
•Bridge configuration could be realized with 40V P-Channel as high side device with no need of charge pump

Silicon P-Channel MOSFET, 120 A, 40 V, 3-Pin D2PAK IPB120P04P4L03ATMA2
Manufacturer:
Infineon
Manufacturer Part No:
IPB120P04P4L03ATMA2
Enrgtech Part No:
ET21647438
Warranty:
Manufacturer
£ 2.99
Checking for live stock
Channel Type:
P
Maximum Continuous Drain Current:
120 A
Maximum Drain Source Voltage:
40 V
Package Type:
D2PAK (TO-263)
Series:
IPB
Mounting Type:
Surface Mount
Pin Count:
3
Maximum Drain Source Resistance:
0.0031 Ω
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
2.2V
Transistor Material:
Silicon
Number of Elements per Chip:
1